A new laser scribing scheme for poly-Si based thin film solar cell is proposed. This technology consists of 1)
simultaneous removal of underlying TCO and poly-Si film, 2) electrical isolation by resin coating using inkjet and
3)selective top electrode removal by laser ablation of photoresist mask layer followed by chemical etching. Process
defects such as crack and parasitic melting can be eliminated by proposed patterning technology. This process can be
highly cost-effective because less laser patterning steps are required and less area for series interconnection is needed.
Poly-Si thin film solar cell was successfully fabricated and showed 7.4% of conversion efficiency.
Conventional patterning processes for series connection of silicon thin film solar cells are composed of laser scribing
processes, such as pattering of front electrode (P1), patterning of silicon thin films (P2) and patterning of silicon thin
films and back electrode (P3). However, we have proposed a new series connection scheme of silicon thin film solar
cells using direct inkjet patterning technology. The combination of laser scribing and inkjet printing technologies can
realize the series connected cell structure. After the deposition of silicon thin films without P1 process, both front
electrode and silicon thin films are patterned first by ultra violet (UV) laser scribing with the wavelength of 352 nm.
Then, to prevent the shunting between front and back electrodes, spacers were formed on the sidewalls of laser scribed
lines by inkjet printing. The series connected cells were fabricated by the following deposition of back electrode and P3
laser scribing process. In this research, we have developed the spacer formation process using the resin based dielectric
ink. Also, we have fabricated and characterized the amorphous silicon (a-Si) thin film solar modules with proposed
structure.
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