KEYWORDS: Line width roughness, Calibration, Standards development, 3D imaging standards, Very large scale integration, Atomic force microscopy, Silicon, Manufacturing, Lithium, Lab on a chip
SI-traceable critical dimension 3DAFM was used to characterize 25 nm NanoCD linewidth standard. The standard has a uniquely low linewidth roughness (LWR) and can be used as a benchmark during development of advanced patterning technologies. The following results were obtained: (a) Mean LWR for two 25 nm standards with uncertainty ±0.02 nm (0.95 CL). The LWR is below 0.7 nm (1s). (b) Distribution of LWR and linewidth (LW) at 3 line heights (20, 50 and 80% from the line top) along 3 mm segment of the standards. Variations are below 0.25 nm and 0.07 nm (1s) for LW and LWR, respectively. (c) Spatial power spectra of LWR of the standards. The NanoCD spectrum resembles reported earlier spectra of polycrystalline Si.
This paper is a practical guide to the calibration of magnification of a CD-SEM using a pitch standard. It answers two fundamental metrology questions: 1) how many individual pitch measurements should one take in order to estimate the average pitch of the sample with a specified uncertainty and with a specified confidence level?, and 2) when is it appropriate to recalibrate the instrument following the measurement of the standard? In answering these questions, this paper identifies Cost of Ownership (CoO) elements of the calibration process and outlines best engineering practices for the calibration procedure. The discussion is then extended to the case of tool matching and calibration of not just a single measurement tool, but an entire measurement system comprised of several measurement tools all matched to each other. Finally, this paper discusses the problem of hydrocarbon contamination in a CD-SEM, which limits the number of times that a certain location on the standard can be used for calibration, and presents a methodology to determine how often the measurement location should be changed.
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