For applications in portable electronic devices and machine vision, a small sized focus-tunable lens or lens system is highly desired. Materials with electrically tunable optical refractive indices are required in these fields. A functional material consisting of a WS2 thin film on a SiC substrate was synthesized and reported in our investigation. A 15-nm-thick WS2 film was deposited on an n-doped SiC substrate (7.37 × 1019 cm − 3) by pulsed laser deposition. The optical refractive index of the WS2 / SiC material was found to be electrically tunable. The value of the effective optical refractive index ranged from 4.03 to 5.84, which implies a 44.9% variation in the refractive index change, at a wavelength of 460 nm under an applied external DC voltage modulated in the range of 0 to 7 V. We also found experimentally that the focal length of the plane lens was tunable from 184 to 156 mm at a wavelength of 650 nm with the applied voltage ranging from 0 to 7 V. Our investigation presents a new way to modulate the refractive index and make the compact focus-tunable lens design convenient.
Photoelectric functional material WS2 thin film on SiC substrate was synthesized. Both 15 and 150 nm thickness of WS2 film were deposited on an n-doped SiC substrate (7.37 × 1019 cm − 3) by pulsed laser deposition method. Optical properties of the WS2 / SiC material were discovered. (I) a photovoltaic effect: (1) there is a cutoff wavelength λc (661 nm), which means the wavelength of an incident monochromatic light must be less than λc in order to have the photovoltaic effect; (2) the incident light must be polarized. (3) It was found that the maximum open circuit voltage output is 6.3 V in a condition of 40 mW @ 532 nm. (II) Wavelength blueshift: when a laser of 532 nm is used in the experiment to incident perpendicularly through the thin layer WS2 / SiC film stack, which is driven by an external electric field, it is found that the 532-nm photons are blueshifted 1.33 nm under a 30 V (DC) voltage. We also find that the blueshift of the laser wavelength is tunable with the applied voltage. Inverse Compton scattering of the photon by both electron and hole is used to explain this blueshift, the consistency of experimental results and the theoretical calculation for the wavelength blueshift was found.
An optical material WS2 thin film on SiC substrate was synthesized. Both 15nm and 150nm thickness of WS2 films were deposited on a n-doped SiC substrate by pulsed laser deposition (PLD) method. Tungsten disulfide films were superimposed face to face, and silicon carbide was used as the electrode to apply an electric field ranging from 0V/nm to 0.18v /nm. The experimental results showed that band gap were continuously tunable from 2.017ev to 1.507ev. The first principle calculation by using Quantum Espresso also was performed to simulate the band gap change with the increase of an external electric field. It is found that the band gap of WS2/SiC film changes from 1.973ev to 1.488ev as an electric field applied perpendicularly to the film ranging from 0V/nm to 0.18v /nm. The consistency of experimental results and the first principle calculation was found.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.