A microwave mixer based on a tunable microwave photonic filter is presented and experimentally demonstrated. The tunable microwave photonic filter consists of a broadband optical source and a dual-parallel Mach–Zehnder modulator employing a variable optical carrier time-shift method. The central frequency of the tunable single-passband filter can be tuned by adjusting an optical variable delay line. The filter can select the wanted mixing components and suppress the other mixing spurs. Experiments are performed and the results show that the out-of-band rejection ratio of the filter is over 45 dB. The up-converted and down-converted signals are successfully selected, and the unwanted mixing spurs are effectively suppressed.
A tunable dual-frequency optoelectronic oscillator (OEO) based on a tunable dual-passband microwave photonic filter (DPMPF) is proposed and demonstrated. The DPMPF is based on phase-to-intensity modulation (PM-IM) conversion and stimulated Brillouin scattering (SBS). Two pump lightwaves are generated through carrier-suppression doublesideband modulation (CS-DSB) in a Mach-Zehnder modulator (MZM) to generate two SBS gain regions in a single mode fiber. Two SBS gain regions act on the phase modulation signal to achieve a dual-passband filter. Through simply varying the frequency of the radio frequency (RF) signal used for CS-DSB, the two central frequencies of the OEO can be tuned with the frequency interval kept constant. In addition, adjusting the frequency of tunable optical source launched to the MZM, the frequency interval of the OEO can be tuned. In the experiment, the dual-frequency OEOs with frequency intervals of 0.2 GHz and 1.2 GHz are achieved, respectively. The frequency tuning range from 3 to 8 GHz is demonstrated. The dual-frequency OEO with the frequency interval tuned is also achieved.
Gain and phase dynamic characteristics in the compressive, unstrained and tensile strained InGaAs-InGaAsP quantum well (QW) semiconductor optical amplifiers (SOAs) are theoretically investigated via a detailed model. Based on the calculation of energy band structure, the effects of compressive and tensile strain on the differential gain and the derivative of refractive index change are investigated. It is demonstrated that the compressive strained QW SOA shows the fastest gain recovery rate and the largest phase change. That is because the SOA has the characteristics of the largest differential gain and the smallest derivative of refractive index change. In addition, the ultrafast recovery process due to the carrier heating effect can be enhanced significantly in the tensile strained QW SOA.
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