Presentation
8 June 2023 Optoelectronic devices based on scalable 2D materials
Author Affiliations +
Abstract
Two-dimensional (2D) materials represent a fascinating material class for optoelectronics. While proof-of-concept devices with outstanding performance has been reported in literature, they often rely on micrometer-scale 2D materials and are thus of limited practical use. Overcoming the bottleneck to real-world applications requires both scalable materials and scalable device architectures. We report on wafer-scale 2D materials grown by MOCVD and their implementation in scalable optoelectronic devices. Light emitting devices realized by embedding WS2 monolayers in a vertical device design emit large area red electroluminescence with a turn-on voltage as low as 2.5 V on both, rigid as well as flexible substrates. Direct growth of 2D material heterostructures on a sapphire substrate enables the fabrication of photodetectors without involving any transfer process. We demonstrate an enhancement of the responsivity by more than 5 orders of magnitude in a WS2-MoS2 heterostructure device as compared to a single layer reference. In photosensors that combine a MOCVD-grown WS2 monolayer as light sensitizer with CVD-grown graphene as a conductive channel, we have been able to shed light on the widely varying values of responsivity reported in literature by disentangling adsorbate effects and intrinsic photoresponse.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerd Bacher "Optoelectronic devices based on scalable 2D materials", Proc. SPIE PC12584, Smart Materials for Opto-Electronic Applications, PC125840H (8 June 2023); https://doi.org/10.1117/12.2665706
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KEYWORDS
Optoelectronic devices

Metalorganic chemical vapor deposition

Graphene

Heterojunctions

Optoelectronics

Photodetectors

Sapphire

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