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9 March 2024 Advances in InGaN lasers diodes for emerging applications in the visible spectral range
Phillip Skahan
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860Z (2024) https://doi.org/10.1117/12.3003168
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
We report on recent advances in InGaN laser diodes(LDs) for emerging applications in the visible spectrum. KSLD has matured semipolar/non-polar epitaxial growth, epitaxial layer transfer, and wafer-level facet formation technologies enabling a new class of high-performance LDs. We will present the performance of high efficiency, single mode LDs spanning violet to green wavelengths. In addition, we will present progress on developing manufacturable distributed feedback LDs. These new devices can enable advances in applications including: AR/VR, quantum sensing, quantum computing, directed energy, 3D printing, optical wireless communication, biomedical, and life science.
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Phillip Skahan "Advances in InGaN lasers diodes for emerging applications in the visible spectral range", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860Z (9 March 2024); https://doi.org/10.1117/12.3003168
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KEYWORDS
Indium gallium nitride
Semiconductor lasers
Visible radiation
Biomedical optics
Laser applications
Quantum processes
Quantum computing
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