Diluted disilane as silicon source for uniform and controllable n-type doping of Ga2O3 via molecular beam epitaxy

Elaheh Ahmadi; Zhuoqun Wen

doi:10.1117/12.3012550

16 March 2024 Diluted disilane as silicon source for uniform and controllable n-type doping of Ga₂O₃ via molecular beam epitaxy

Elaheh Ahmadi, Zhuoqun Wen

Author Affiliations +

Proceedings Volume PC12887, Oxide-based Materials and Devices XV; PC128870D (2024) https://doi.org/10.1117/12.3012550
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Obtaining uniform silicon concentration, especially with low concentrations (ranging from 1x10^16 cm^-3 to 1x10^18 cm^-3) by molecular beam epitaxy (MBE) has been challenging due to the oxidation of silicon solid source in the oxide environment. In this talk, I will present our recent results on Si doping of β-Ga2O3 (010) films by diluted disilane as the Si source is investigated using a hybrid plasma-assisted molecular beam epitaxy (hybrid-PAMBE). Uniform Si concentrations ranging from 3×10^16 cm^-3 to 2×10^19cm^-3 are achieved. We also investigated Ga sub-oxide as Ga source. The impact of using Ga metal vs Ga sub-oxide on Si doping was investigated.

Conference Presentation

Citation Download Citation

Elaheh Ahmadi and Zhuoqun Wen "Diluted disilane as silicon source for uniform and controllable n-type doping of Ga₂O₃ via molecular beam epitaxy", Proc. SPIE PC12887, Oxide-based Materials and Devices XV, PC128870D (16 March 2024); https://doi.org/10.1117/12.3012550

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