Paper
25 July 1979 Rapid Switching of Photothermoplastic Devices
U. Killat, G. Rabe, D. R. Terrell
Author Affiliations +
Proceedings Volume 0164, 4th European Electro-Optics Conf; (1979) https://doi.org/10.1117/12.965493
Event: Fourth European Electro-Optics Conference, 1978, Utrecht, Netherlands
Abstract
Information recording in conventional photothermoplastic devices (PTD's) entails charging, illumination and heat-development of the device. These three steps are examined with respect to the ultimate speed of photothermoplastic recording. It is shown that to a first order approximation the sensitivity of a PTD is proportional to the electrophotographic sensitivity Ce of the photoconductor layer. Several 'fast organic photoconductors' for use at 515 nm and 633 nm have been developed. Rapid heat development, which is largely limited by the viscoelastic properties of the thermoplastic used, has been found to be limited to the p_s-range. However, such short development times lead to overheating and therefore development times of about 100 pis are recommended for prolonged cycling. Some recent investigations are reported on a new class of PTD's developed for point storage applications. These devices operate in the 50-200 µs range and utilize photo-induced development.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
U. Killat, G. Rabe, and D. R. Terrell "Rapid Switching of Photothermoplastic Devices", Proc. SPIE 0164, 4th European Electro-Optics Conf, (25 July 1979); https://doi.org/10.1117/12.965493
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KEYWORDS
Photoresistors

Diffraction

Signal detection

Switching

Electrodes

Scattering

Cerium

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