Advances In (Hg,Cd)Te Materials Technology

D. A. Nelson; W. M. Higgins; R. A. Lancaster

doi:10.1117/12.958702

6 August 1980 Advances In (Hg,Cd)Te Materials Technology

D. A. Nelson, W. M. Higgins, R. A. Lancaster

Proceedings Volume 0225, Infrared Image Sensor Technology; (1980) https://doi.org/10.1117/12.958702
Event: 1980 Technical Symposium East, 1980, Washington, D.C., United States

Abstract

Mercury cadmium telluride, Hgi_ x Cd x Te, a direct band-gap semiconducting alloy with the band-gap adjustable by varying the alloy composition, has become the material-of-choice for innumerable infrared-detection applications over the 2 to 20 micrometer spectral range. N-type, p-type and intrinsic material can be readily prepared, either by doping or by adjustment of alloy stoichiometry, greatly enhancing the versatility of this alloy system. Material requirements for the next generation of infrared detectors, large area two-dimensional arrays, have placed unprecedented demands on Hgi_ x Cd x Te materials technology. Major research efforts are being conducted which address this need including epitaxial and bulk crystal growth methods, both on earth and in space.

Citation Download Citation

D. A. Nelson, W. M. Higgins, and R. A. Lancaster "Advances In (Hg,Cd)Te Materials Technology", Proc. SPIE 0225, Infrared Image Sensor Technology, (6 August 1980); https://doi.org/10.1117/12.958702

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