Scanning Ion Beam Lithography For Sub-Micron Structure Fabrication

J. R. A. Cleaver; P. J. Heard; H. Ahmed

doi:10.1117/12.935104

7 November 1983 Scanning Ion Beam Lithography For Sub-Micron Structure Fabrication

J. R. A. Cleaver, P. J. Heard, H. Ahmed

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935104
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

A scanning ion beam lithography instrument for the fabrication of sub-micron structures has been constructed and evaluated. It employs a tetrode gun, which accelerates the ions to the full beam voltage, and an einzel lens objective. Both gallium and gold-silicon liquid-metal sources have been used for resist exposure, and gallium sources have been used for direct selective ion implantation and for micromachining.

Citation Download Citation

J. R. A. Cleaver, P. J. Heard, and H. Ahmed "Scanning Ion Beam Lithography For Sub-Micron Structure Fabrication", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935104

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