Submicron Electron Beam And Optical Lithography Using A Tri-Level Resist Scheme

F Buiguez; P. Parrens; B. Picard

doi:10.1117/12.935110

7 November 1983 Submicron Electron Beam And Optical Lithography Using A Tri-Level Resist Scheme

F Buiguez, P. Parrens, B. Picard

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935110
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

This paper describes the application of the tri-level resist system for both optical and electron beam lithographies, in order to improve the resolution.

Citation Download Citation

F Buiguez, P. Parrens, and B. Picard "Submicron Electron Beam And Optical Lithography Using A Tri-Level Resist Scheme", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935110

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