Paper
7 November 1983 Microlithography Techniques Using A Microwave Powered Deep UV Source
John C. Matthews, Michael G. Ury, Anthony D. Birch, Mitchell A. Lashman
Author Affiliations +
Abstract
A number of multilevel resist processes are being developed to solve the difficult problem of producing submicrometer circuit features over profiled surfaces. The application of a novel illumination system, comprising a microwave powered source and catadioptic optical system, to accomplish the pattern transfer step through planarization resists by deep UV flood exposure is characterized. The microwave powered lamp generates 114 watts of deep UV (200 - 260 nm) with an efficiency of greater than 9%. Data showing an effec-tive bulb lifetime of 500 hours or more is presented. Optical filtering techniques are described which effectively attenuate energy above 245 nm and result in excellent critical dimension control. Enhancing areas of the deep UV spectrum by using microwave powered bulbs with additive materials such as cadmium is discussed, and spectral data presented. Problem areas for successful use of the PCM process in production are defined and solutions are discussed. Finally, extensions of microwave powered deep UV lamp technology to other areas of microlithography are discussed.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John C. Matthews, Michael G. Ury, Anthony D. Birch, and Mitchell A. Lashman "Microlithography Techniques Using A Microwave Powered Deep UV Source", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); https://doi.org/10.1117/12.935136
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Cited by 4 scholarly publications.
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KEYWORDS
Polymethylmethacrylate

Deep ultraviolet

Semiconducting wafers

Microwave radiation

Etching

Plasma

Plasma etching

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