Laser-Assisted Dry Etching Of Semiconducting Materials

P Brewer; W Holber; G Reksten; R M Osgood Jr.

doi:10.1117/12.939447

14 June 1984 Laser-Assisted Dry Etching Of Semiconducting Materials

P Brewer, W Holber, G Reksten, R M Osgood Jr.

Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939447
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The use of laser assisted chemistry for dry etching of semiconductors is described. Both direct laser-driven etching of GaAs and laser-enhanced plasma etching of Si are given as examples.

Citation Download Citation

P Brewer, W Holber, G Reksten, and R M Osgood Jr. "Laser-Assisted Dry Etching Of Semiconducting Materials", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); https://doi.org/10.1117/12.939447

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