Formation Of Silicon On Insulator Structures By Ion Implantation

P.L.F . Hemment

doi:10.1117/12.946491

9 April 1985 Formation Of Silicon On Insulator Structures By Ion Implantation

P.L.F . Hemment

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946491
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The synthesis of buried dielectric layers by the implantation of reactive ions (0⁺, N⁺) to form silicon on insulator substrates suitable for very large scale integration (VLSI) circuits is described. Silicon (100) wafers have been implanted with ions of energy 100-300 key and doses in the range 0.25 x 1018 to 2.6 x 10¹⁸ cm². These structures have been annealed at temperatures of up to 1200^oC. The composition, microstructure and electrical properties are reported and a comparison is made between substrates formed by O⁺ and N⁺ implantations.

Citation Download Citation

P.L.F . Hemment "Formation Of Silicon On Insulator Structures By Ion Implantation", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946491

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