Paper
20 June 1985 Submicron Pattern Fabrication By Focused Ion Beams
T. Kato, H. Morimoto, H. Nakata
Author Affiliations +
Abstract
In order to develop new generation VLSI devices ( 4 - 16 M Dynamic RAMS ), a submicron fabrication technology is strongly desired. With conventional optical lithography methods, there is a inherent limit of 0.5 - 0.7 μm linewidths. Focused Ion Beam ( FIB ) lithography is expected to emerge in the future because of its many advantages for submicron lithography. Both a submicron Si MOSFET with a high switching speed and a GaAs MESFET with a 0.25 μm gate have been fabricated using FIB lithography technology.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Kato, H. Morimoto, and H. Nakata "Submicron Pattern Fabrication By Focused Ion Beams", Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); https://doi.org/10.1117/12.947501
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Ion beams

Ions

Field effect transistors

Lithography

Submicron lithography

Scanning electron microscopy

Very large scale integration

RELATED CONTENT


Back to Top