The Ultimate Bandwidth Of Semiconductor Lasers

John E. Bowers

doi:10.1117/12.937681

14 January 1987 The Ultimate Bandwidth Of Semiconductor Lasers

John E. Bowers

Proceedings Volume 0723, Progress in Semiconductor Laser Diodes; (1987) https://doi.org/10.1117/12.937681
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

The fundamentals of high frequency semiconductor laser modulation will be reviewed with emphasis on the inherent limits to very high frequency modulation. The tradeoffs between high speed operation and high power operation will be presented along with suggestions to increase the laser bandwidth. Recent world wide progress will be described, including the experimental room temperature demonstrations of 25 GHz pulsed bandwidth and 18 GHz cw bandwidth. Theoretical calculations and experimental results for large signal modulation will be presented showing the relation between large and small signal modulation formats.

Citation Download Citation

John E. Bowers "The Ultimate Bandwidth Of Semiconductor Lasers", Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); https://doi.org/10.1117/12.937681

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