Paper
3 August 1987 Quantum Transport For Bloch Electrons In Homogeneous Time Dependent Electric Fields
Gerald J. Iafrate, Joseph B. Krieger
Author Affiliations +
Proceedings Volume 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors; (1987) https://doi.org/10.1117/12.940864
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Quantum Transport Equations for Bloch electrons interacting with randomly distributed impurities in the presence of a homogeneous electric field of arbitrary strength and time dependence are derived. The equations account for all possible quantum effects to lowest nonzero order in the scattering strength, including intra and interband scattering, interband Zener tunneling and non-linear transient transport, and contain effects previously not anticipated, such as coherent impurity scattering, and field and time dependent scattering matrix elements.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerald J. Iafrate and Joseph B. Krieger "Quantum Transport For Bloch Electrons In Homogeneous Time Dependent Electric Fields", Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); https://doi.org/10.1117/12.940864
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KEYWORDS
Scattering

Electrons

Semiconductors

Laser beam diagnostics

Ultrafast lasers

Chemical elements

Transition metals

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