Characteristics Of Nonselective Gaas/(A1,Ga)As Heterostructure Etching At Very Low Etch Rates

M. Schneider; C. Colvard; K. Alavi; E. Kohn

doi:10.1117/12.941037

22 April 1987 Characteristics Of Nonselective Gaas/(A1,Ga)As Heterostructure Etching At Very Low Etch Rates

M. Schneider, C. Colvard, K. Alavi, E. Kohn

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941037
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Wet etching of (Al,Ga)As material and heterojunctions with etch speeds in the range of 3 to 4 Å/second using a citric acid based etch have been investigated by studying etch profiles and surface film formation. Etch mechanisms are identified based on observations of isotropic and preferential etching and surface film characteristics.

Citation Download Citation

M. Schneider, C. Colvard, K. Alavi, and E. Kohn "Characteristics Of Nonselective Gaas/(A1,Ga)As Heterostructure Etching At Very Low Etch Rates", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941037

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