Paper
15 August 1988 Review Of Band-Gap Engineered Photodiodes
M K Benedict
Author Affiliations +
Abstract
This paper describes the use of band-gap engineering for designing photodiodes. Band-gap engineering is discussed in the context of low-noise avalanche photodiodes and new applications of Classes III and V materials. Recently published results are reviewed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M K Benedict "Review Of Band-Gap Engineered Photodiodes", Proc. SPIE 0930, Infrared Detectors and Arrays, (15 August 1988); https://doi.org/10.1117/12.946630
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Diodes

Ionization

Superlattices

Signal to noise ratio

Sensors

Infrared detectors

Avalanche photodiodes

RELATED CONTENT

High-Speed Multiquantum Well Avalanche Photodiodes
Proceedings of SPIE (May 16 1988)
GaAlAs/GaAs Avalanche Photodetectors
Proceedings of SPIE (July 28 1981)
Dual band LWIR/VLWIR type-II superlattice photodiodes
Proceedings of SPIE (May 31 2005)
Advances in multiple-quantum-well IR detectors
Proceedings of SPIE (November 01 1991)

Back to Top