Paper
21 March 1989 Characterizing Birefringent Crystal Wafers With A Scanning Laser Microscope
W. E. Wolf
Author Affiliations +
Proceedings Volume 1004, Automated Inspection and High-Speed Vision Architectures II; (1989) https://doi.org/10.1117/12.948985
Event: 1988 Cambridge Symposium on Advances in Intelligent Robotics Systems, 1988, Boston, MA, United States
Abstract
A near-real-time scanning laser microscope has been developed to assist in the characterization of crystal wafers used to produce integrated optical devices. This instrument is employed in an experimental program to correlate crystal anomalies with integrated device performance. A combination of polarization and masking techniques is used to generate images of higher contrast ratio and larger useful field of view than obtainable with conventional microscopy techniques. The raster-scanning beam design allows rapid image formation, which speeds the inspection operation. The addition of confocal optics increases the flexibility of the instrument and expands the useful applications to include biological and integrated structure characterization problems. Automation techniques are used to minimize the time required to inspect a given sample. A computer system prepares summarizing data displays that contain the key parameters describing the sample.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. E. Wolf "Characterizing Birefringent Crystal Wafers With A Scanning Laser Microscope", Proc. SPIE 1004, Automated Inspection and High-Speed Vision Architectures II, (21 March 1989); https://doi.org/10.1117/12.948985
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KEYWORDS
Microscopes

Inspection

Imaging systems

Crystals

Semiconducting wafers

Birefringence

Raster graphics

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