Mode-locked sub 200 fs laser pulses from an Er-Yb-Ce ZBLAN waveguide laser

David G. Lancaster; Champak Khurmi; Nicolas Bourbeau-Hebert; Jerome Genest; George Chen; Wenqi Zhang; Shahraam Afshar; Tanya M. Monro

doi:10.1117/12.2255708

17 February 2017 Mode-locked sub 200 fs laser pulses from an Er-Yb-Ce ZBLAN waveguide laser

David G. Lancaster, Champak Khurmi, Nicolas Bourbeau-Hebert, Jerome Genest, George Chen, Wenqi Zhang, Shahraam Afshar, Tanya M. Monro

Author Affiliations +

Proceedings Volume 10082, Solid State Lasers XXVI: Technology and Devices; 100821A (2017) https://doi.org/10.1117/12.2255708
Event: SPIE LASE, 2017, San Francisco, California, United States

Abstract

Passively mode-locked sub 200 fs pulses are generated from Er-Yb co-doped ZBLAN waveguide laser using a semiconductor saturable absorber mirror repetition rates of up to 533 MHz. At 156 MHz and 1556 nm central wavelength, the chip laser operates with a broad 25 nm bandwidth. The waveguides were written in the Er-Yb co-doped ZBLAN glass by using ultrafast laser inscription.

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David G. Lancaster, Champak Khurmi, Nicolas Bourbeau-Hebert, Jerome Genest, George Chen, Wenqi Zhang, Shahraam Afshar, and Tanya M. Monro "Mode-locked sub 200 fs laser pulses from an Er-Yb-Ce ZBLAN waveguide laser", Proc. SPIE 10082, Solid State Lasers XXVI: Technology and Devices, 100821A (17 February 2017); https://doi.org/10.1117/12.2255708

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