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28 March 2017 Monitoring of 450mm copper seeding and plating process via dark field inspection haze
Nithin Yathapu, Milo Tallon, Justin Brown
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Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 1014527 (2017) https://doi.org/10.1117/12.2258120
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States
Abstract
This study explores the feasibility of utilizing the high throughput non-destructive inspection by Surface Scanning Inspection System (SSIS) of copper wafers to monitor the quality of the copper seeding and electroplating process. Currently copper grain size and surface quality is measured by atomic force microscope (AFM). While AFM provides high resolution information down to 1 um2 it is highly time intensive inspection of a single wafer taking up to 20 minutes. The SSIS in this study provides fast full wafer surface roughness information in 450um × 450um blocks. This paper will also investigate the advantages of identifying wafer level process variation of the copper film deposition with the SSIS versus sampled points of AFM inspection. With full wafer surface roughness information it may be possible to find a commonality between the quality of the copper electroplating process based up on the haze information of the copper seeding wafer.
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Nithin Yathapu, Milo Tallon, and Justin Brown "Monitoring of 450mm copper seeding and plating process via dark field inspection haze", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014527 (28 March 2017); https://doi.org/10.1117/12.2258120
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KEYWORDS
Semiconducting wafers
Atomic force microscopy
Copper
Inspection
Surface roughness
Silicon
Silica
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