A novel laser tunning technique, fully compatible with conventional CMOS processes, is described for analog and mixed microelectronics applications. In this method, a laser beam is used to create a resistive device by melting a silicon area, thereby forming an electrical link between two adjacent p-n junction diodes. These laser diffusible resistances can be made in the range of 100S2 to a few MS2, with an accuracy of 5Oppm, by using an iterative process.
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