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21 September 2017 Multi-purpose highly sensitive room temperature nano based detector (Conference Presentation)
Yossi Paltiel
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Proceedings Volume 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017; 103530O (2017) https://doi.org/10.1117/12.2275578
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States
Abstract
The ability to integrate electronics with Nanocrystals (NCs) allows utilizing their unique properties for a future optoelectronic device. Combing top down approach using self-assembled hybrid organic-NCs systems, with bottom up components can revolutionize devices in future. In my talk I will present an ultra-high light sensing device based on InAs NCs acting as an optical gate to high electron mobility transistor (HEMT) device. Using a very narrow channel the device quantum efficiency is high as 106V/W, while the single to noise ratio (SNR) enables high sensitivity photon detection. In addition a side gate detector will be present showing enhancement in the sensitivity for light and gas detection. The same concept can be used to develop tunable, simple and flexible detector for the IR range printing semiconducting/conducting carbon nanotubes layer mixed with doped semiconductor nanocrystals.
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Yossi Paltiel "Multi-purpose highly sensitive room temperature nano based detector (Conference Presentation)", Proc. SPIE 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017, 103530O (21 September 2017); https://doi.org/10.1117/12.2275578
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KEYWORDS
Sensors
Infrared imaging
Nanocrystals
Semiconductors
Signal to noise ratio
Single photon detectors
Electronics
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