Characterizing the surface fluctuation of an epitaxial wafer by using a Shack-Hartmann wave-front sensor

Pao-Keng Yang; Yao-Kai Zhuang

doi:10.1117/12.2273276

23 August 2017 Characterizing the surface fluctuation of an epitaxial wafer by using a Shack-Hartmann wave-front sensor

Pao-Keng Yang, Yao-Kai Zhuang

Proceedings Volume 10373, Applied Optical Metrology II; 103730W (2017) https://doi.org/10.1117/12.2273276
Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States

Abstract

By using a light-emitting diode as the probing light source and a Shack-Hartmann wave-front sensor to execute a relative measurement, we present a simple and sensitive method for measuring surface fluctuation of a nominally flat sample. We used an epitaxial wafer for test. The reflected wave front from the surface of the sample was first calibrated to be a planar surface. The surface fluctuation of the test sample could be estimated from the increment on the variance of the wave-front surface to its regression plane after the sample had been shifted by a small distance by using the Bienaymé formula.

Citation Download Citation

Pao-Keng Yang and Yao-Kai Zhuang "Characterizing the surface fluctuation of an epitaxial wafer by using a Shack-Hartmann wave-front sensor", Proc. SPIE 10373, Applied Optical Metrology II, 103730W (23 August 2017); https://doi.org/10.1117/12.2273276

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