Ultra-high power semiconductor devices: heat-sinking using GaN-on-diamond

Martin Kuball

doi:10.1117/12.2279182

6 September 2017 Ultra-high power semiconductor devices: heat-sinking using GaN-on-diamond

Martin Kuball

Proceedings Volume 10378, Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems; 103780A (2017) https://doi.org/10.1117/12.2279182
Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States

Abstract

GaN devices when operated at high powers are limited by excessive temperature rise in the device critical regions. Traditionally SiC, Si or sapphire substrates or homoepitaxy on GaN substrates are used for the growth of GaN device structures, however, the substrate thermal conductivity is rather limited. Diamond substrates with their ultra-high thermal conductivity offer new opportunities for achieving ultra-high power GaN electronic microwave / RF devices, and optoelectronic devices. This is presently being explored within the UK EPSRC research program GaN-DaME.

Conference Presentation

Citation Download Citation

Martin Kuball "Ultra-high power semiconductor devices: heat-sinking using GaN-on-diamond", Proc. SPIE 10378, Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 103780A (6 September 2017); https://doi.org/10.1117/12.2279182

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