Femtosecond written buried waveguides in silicon

G. Matthäus; H. Kämmer; K. A. Lammers; W. Watanabe; S. Nolte

doi:10.1117/12.2289819

16 February 2018 Femtosecond written buried waveguides in silicon

G. Matthäus, H. Kämmer, K. A. Lammers, W. Watanabe, S. Nolte

Proceedings Volume 10519, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIII; 105190K (2018) https://doi.org/10.1117/12.2289819
Event: SPIE LASE, 2018, San Francisco, California, United States

Abstract

The laser inscription of waveguides into the volume of crystalline silicon is presented. By using sub-ps laser pulses at a wavelength of 1552 nm highly localized light guiding structures with an average diameter ranging from 1 – 3 μm are achieved. The generated waveguides are characterized in terms of mode field distribution, damping losses and permanent refractive index modification. First investigations indicate an induced increase of the refractive index in the order of 10^-3 to 10^-2. Depending on the applied laser pulse energy single-mode to multimode like propagation behavior can be observed. At optimized processing parameters, the damping losses can be estimated below 3 dB/mm.

Citation Download Citation

G. Matthäus, H. Kämmer, K. A. Lammers, W. Watanabe, and S. Nolte "Femtosecond written buried waveguides in silicon", Proc. SPIE 10519, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIII, 105190K (16 February 2018); https://doi.org/10.1117/12.2289819

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