The light behavior from Shallow Trench Isolation profiles at Chemical Mechanical Planarization step and correlation with optical endpoint system by interferometry

S. Bourzgui; G. Georges; A. Roussy; J. Blue; E. Faivre; J. Pinaton

doi:10.1117/12.2320966

4 September 2018 The light behavior from Shallow Trench Isolation profiles at Chemical Mechanical Planarization step and correlation with optical endpoint system by interferometry

S. Bourzgui, G. Georges, A. Roussy, J. Blue, E. Faivre, J. Pinaton

Author Affiliations +

Proceedings Volume 10750, Reflection, Scattering, and Diffraction from Surfaces VI; 107500C (2018) https://doi.org/10.1117/12.2320966
Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States

Abstract

In the semiconductor manufacturing, the control of Chemical-Mechanical Planarization (CMP) process time for Shallow Trench Isolation (STI) is important. A wafer under- or over-polishing causes leakage and short-circuits making the chips defective. The CMP process control by interferometry is one of the most used systems to monitor the polishing time. In some cases, the interferometry process control is not possible because the wafer patterns cause some unwanted effects such as scattering, diffraction, and absorption. Consequently the signal is affected. In this paper, we apply a theoretical and experimental approach on the light reflected from different STI stacks in order to interpret the observed optical phenomenon. The experimental study is done to get close to the light measurement conditions within the manufacturing environment. With this experiment, we evidence that the trench pattern inside memory zones is responsible for the diffraction effect on the signal. In a production environment, this pattern results in a lower measured intensity when the size of memory area increases. Besides, numerical calculations are performed based on differential method in order to predict the diffracted intensity, which depends on the chip design parameters and the incident wavelengths tuning. By using STI models, this method helps to determine the wavelengths with the highest reflected intensity.

Citation Download Citation

S. Bourzgui, G. Georges, A. Roussy, J. Blue, E. Faivre, and J. Pinaton "The light behavior from Shallow Trench Isolation profiles at Chemical Mechanical Planarization step and correlation with optical endpoint system by interferometry", Proc. SPIE 10750, Reflection, Scattering, and Diffraction from Surfaces VI, 107500C (4 September 2018); https://doi.org/10.1117/12.2320966

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Chemical mechanical planarization

Polishing

Interferometry

Diffraction

Semiconducting wafers

Signal detection

Process control

Show All Keywords

Keywords/Phrases

Search In:

Publication Years