Paper
3 October 2018 EUV industrialization high volume manufacturing with NXE3400B
Author Affiliations +
Abstract
With the introduction of its fifth-generation NXE:3400B scanner, ASML brought EUV to High-Volume Manufacturing for 7 nm node lithography and beyond with full support of pellicle. This paper presents an update on lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour. Advances in source power and system availability have enabled a continued increase of productivity. To maximize the number of yielding dies per day excellent Overlay, Focus, and Critical Dimension (CD) control have been realized, combining intrinsic tool stability with holistic control schemes. We will also show matching performance for both Overlay and Imaging, and further improvements in Focus Process Dependencies for the 5nm node.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marcel Mastenbroek "EUV industrialization high volume manufacturing with NXE3400B", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080904 (3 October 2018); https://doi.org/10.1117/12.2502785
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Lithography

Extreme ultraviolet lithography

High volume manufacturing

Scanners

Critical dimension metrology

Pellicles

Semiconducting wafers

Back to Top