Mesa InSb infrared focal plane detector by Be implantation

Peng Wei; Gang Chen; Kelin Zheng

doi:10.1117/12.2505600

12 December 2018 Mesa InSb infrared focal plane detector by Be implantation

Peng Wei, Gang Chen, Kelin Zheng

Proceedings Volume 10846, Optical Sensing and Imaging Technologies and Applications; 108462V (2018) https://doi.org/10.1117/12.2505600
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China

Abstract

The preparation of mesa-type InSb infrared focal plane detectors based on Be ion implantation was studied. The conventional furnace annealing of 350°C for 60 minutes was used to repair the lattice damage due to the implantation. The as-annealed InSb wafers were fabricated into InSb 128×128 array focal plane arrays with pixel size of 50 μm. The current-voltage and imaging characterization shows that the average peak detectivity reaches as high as 7.48×10¹⁰ cm·Hz^1/2/W, with bad pixel ratio of < 0.5% and NETD of 28mK were achieved, implying the InSb detectors by Be implantation has considerable performance with diffusion ones.

Citation Download Citation

Peng Wei, Gang Chen, and Kelin Zheng "Mesa InSb infrared focal plane detector by Be implantation", Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 108462V (12 December 2018); https://doi.org/10.1117/12.2505600

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