Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy

R. S. Pokharia; K. R. Khiangte; J. S. Rathore; J. Schmidt; H. J. Osten; A. Laha; S. Mahapatra

doi:10.1117/12.2509720

27 February 2019 Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy

R. S. Pokharia, K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra

Author Affiliations +

Proceedings Volume 10914, Optical Components and Materials XVI; 1091417 (2019) https://doi.org/10.1117/12.2509720
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal- Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd₂O₃/Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd₂O₃ epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ~ 2 mA/W is observed at a -5V bias, when excited at 1550 nm.

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R. S. Pokharia, K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, and S. Mahapatra "Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy", Proc. SPIE 10914, Optical Components and Materials XVI, 1091417 (27 February 2019); https://doi.org/10.1117/12.2509720

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