Paper
1 March 2019 High-efficiency blue and green laser diodes for laser displays
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Abstract
We present latest development results of GaN based high power blue and green Laser Diodes (LDs). The epitaxial structures of LDs including n-type, active and p-type layers were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure and Electrodes of the n-type and p-type were formed. Front and rear mirror facets were obtained by cleavage at the m-plane surface. We optimized the epitaxial and the device structures for high efficiency, high optical output power and reliability. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. A New developed blue LD showed the optical output power and the voltage of 5.25 W and 4.03 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall plug efficiency of the blue LD was 43.4% at 3A. And pure green LDs at 532 nm showed the optical output power of 1.19 W and the wall plug efficiency of 17.1 % at the forward current of 1.6A. Furthermore, 543 nm green LDs were fabricated on C-plane GaN substrates.
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Yoshitaka Nakatsu, Yoji Nagao, Kazuma Kozuru, Tsuyoshi Hirao, Eiichiro Okahisa, Shingo Masui, Tomoya Yanamoto, and Shin-ichi Nagahama "High-efficiency blue and green laser diodes for laser displays", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181D (1 March 2019); https://doi.org/10.1117/12.2505309
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Cited by 9 scholarly publications.
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KEYWORDS
Light sources

Laser based displays

Semiconductor lasers

Gallium nitride

High power lasers

Metalorganic chemical vapor deposition

Indium gallium nitride

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