Semipolar III-nitride laser diodes for solid-state lighting

Shlomo Mehari; Daniel A. Cohen; Daniel L. Becerra; Haojun Zhang; Claude Weisbuch; James S. Speck; Shuji Nakamura; Steven P. DenBaars

doi:10.1117/12.2506798

1 March 2019 Semipolar III-nitride laser diodes for solid-state lighting

Shlomo Mehari, Daniel A. Cohen, Daniel L. Becerra, Haojun Zhang, Claude Weisbuch, James S. Speck, Shuji Nakamura, Steven P. DenBaars

Author Affiliations +

Proceedings Volume 10939, Novel In-Plane Semiconductor Lasers XVIII; 109390G (2019) https://doi.org/10.1117/12.2506798
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Several hurdles to further enhance the performance of semipolar III-Nitride laser diodes are addressed in this work. Particularly, we focused on improving their high operating voltage by thinning the p-GaN cladding layer and utilizing a transparent conductive oxide p-contact. On-wafer optical absorption measurements showed that a further reduction in voltage with thinner p-GaN was limited by increased optical loss due to increased mode overlap with the ITO/metal anode. In separate attempts to minimize bulk-related optical losses, we implemented a new design that consisted of an AlGaN electron blocking layer (EBL) placed remotely from the quantum wells (QWs) and a low p-waveguide Mg doping profile. A very low optical loss of about 2 cm^-1 was extracted but the net improvement in differential efficiency was limited by lower internal injection efficiency due to carrier accumulation in the p-waveguide region. With an optimized design, that consisted of a lightly doped EBL close to the QWs and a UID p-waveguide, an improved light output power of 1.4 W at 1.5 A and a low threshold current density of 1.2 kA/cm² were obtained.

Citation Download Citation

Shlomo Mehari, Daniel A. Cohen, Daniel L. Becerra, Haojun Zhang, Claude Weisbuch, James S. Speck, Shuji Nakamura, and Steven P. DenBaars "Semipolar III-nitride laser diodes for solid-state lighting", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390G (1 March 2019); https://doi.org/10.1117/12.2506798

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