Paper
1 March 2019 InP/AlGaInP quantum dot laser emitting at short wavelength of 660 nm
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Abstract
In this report, we investigated the optical gain properties and lasing characteristics of a laser structure consisting of one single-layer of self-assembled InP quantum dots in Al0.10GaInP barriers. The optical gain and absorption spectra are obtained by analyzing the amplified spontaneous emission. An internal optical loss value of 5±2 cm−1 , and a maximum peak modal gain of 39.3 cm−1 for a single-sheet of QD were obtained at room temperature. The influence of temperature on the gain properties was studied. A 2.24-mm-long laser with uncoated facets emitting at 660 nm was demonstrated. A low threshold current density of 281 A/cm2 with an external differential quantum efficiency of 34.2% was also achieved.
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Zhihua Huang, Michael Zimmer, Stefan Hepp, Michael Jetter, and Peter Michler "InP/AlGaInP quantum dot laser emitting at short wavelength of 660 nm", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390M (1 March 2019); https://doi.org/10.1117/12.2509508
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KEYWORDS
Indium gallium phosphide

Aluminum

Temperature metrology

Electroluminescence

Absorption

Quantum dot lasers

Quantum dots

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