Investigating EUV radiochemistry with condensed phase photoemission

Jonathan Ma; Andrew R. Neureuther; Patrick P. Naulleau

doi:10.1117/12.2520391

30 May 2019 Investigating EUV radiochemistry with condensed phase photoemission

Jonathan Ma, Andrew R. Neureuther, Patrick P. Naulleau

Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 109571Y (2019) https://doi.org/10.1117/12.2520391
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

In EUV, photoelectrons and secondary electrons play indispensable roles in the chemistry of photoresist. An accurate understanding of electron related processes provides foundation for targeted engineering of resists and other EUV materials. As chemistry is initiated by secondary electrons, acquiring the electron energy distribution inside an actual photoresists is important for improving the efficiency of chemical activation. We demonstrate that condensed phase photoemission spectroscopy can be used as a tool for interrogating electrons in resist and electrons owing from underlayers to resists. The electron energy distribution, albeit different from that measured with condensed phase photoemission spectroscopy, can be recovered computationally. The computational approach involves Monte Carlo simulations using the energy resolved scattering mean free path and the photoemission energy spectra as inputs.

Citation Download Citation

Jonathan Ma, Andrew R. Neureuther, and Patrick P. Naulleau "Investigating EUV radiochemistry with condensed phase photoemission", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109571Y (30 May 2019); https://doi.org/10.1117/12.2520391

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KEYWORDS

Electrons

Scattering

Extreme ultraviolet

Monte Carlo methods

Photoemission spectroscopy

Photoresist materials

Chemistry

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