Presentation + Paper
25 March 2019 Modeling of novel resist technologies
Luke Long, Andrew R. Neureuther, Patrick P. Naulleau
Author Affiliations +
Abstract
In response to the difficulties posed by the resolution, line edge roughness, sensitivity (RLS) trade-off to traditional chemically amplified resist (CAR) systems used for extreme ultraviolet lithography, a number of novel resist technologies have been proposed. In this paper, the effect of quencher loading on three resist technologies is analyzed via an error propagation-based resist simulator. In order of increasing novelty as well as complexity, they are: conventional CAR with quencher, CAR with photodecomposable base, and PSCAR 2.0, a CAR system with photodecomposable base as well as an EUV-activated UV-sensitive resist component. Simulation finds the more complicated resist systems trade in an increase in resist stochastics for improved deprotection slopes, yielding a net benefit in terms of line width roughness.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luke Long, Andrew R. Neureuther, and Patrick P. Naulleau "Modeling of novel resist technologies", Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 1096011 (25 March 2019); https://doi.org/10.1117/12.2515144
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum efficiency

Line width roughness

Ultraviolet radiation

Stochastic processes

Line edge roughness

Extreme ultraviolet lithography

Diffusion

Back to Top