Characteristics Of Ti:LaMgA111019 Crystals Grown By The Heat Exchanger Method (HENN)

C. P. Khattak; S. T. Lai

doi:10.1117/12.960592

25 September 1989 Characteristics Of Ti:LaMgA1₁₁0₁₉ Crystals Grown By The Heat Exchanger Method (HEM^TM)

C. P. Khattak, S. T. Lai

Author Affiliations +

Proceedings Volume 1104, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals; (1989) https://doi.org/10.1117/12.960592
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

Single crystals of Ti:LaMgA1₁₁O₁₉ (Ti:LMAO) up to 20 mm length have been obtained from unseeded ingots grown by the Heat Exchanger Method (HEM^TM). The ingots were grown under reducing atmosphere in order to minimize formation of Ti⁴⁺. Strong fluorescence centered at 780 nm with a half-width ranging from 700 to 880 nm has been observed. The upper state fluorescence lifetime at room temperature was between 3.7 and 7.6 μs. The main broad-band absorption due to Ti³⁺ was centered at 510 nm. In addition, parasitic absorptions at 600 nm and 959 nm have been observed which may be associated with the formation of Ti²⁺.

Citation Download Citation

C. P. Khattak and S. T. Lai "Characteristics Of Ti:LaMgA1₁₁0₁₉ Crystals Grown By The Heat Exchanger Method (HEM^TM)", Proc. SPIE 1104, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals, (25 September 1989); https://doi.org/10.1117/12.960592

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