1.3um InAs/InGaAs QD laser steady output power over 1.07W

Fu-Hui Shao; Yi Zhang; Xiang-Bin Su; Hui-ming Hao; Ying-Qiang Xu; Hai-Qiao Ni; Yu Zhang; Zhi-Chuan Niu

doi:10.1117/12.2521947

24 January 2019 1.3μm InAs/InGaAs QD laser steady output power over 1.07 W

Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hui-ming Hao, Ying-Qiang Xu, Hai-Qiao Ni, Yu Zhang, Zhi-Chuan Niu

Proceedings Volume 11052, Third International Conference on Photonics and Optical Engineering; 1105212 (2019) https://doi.org/10.1117/12.2521947
Event: The International Conference on Photonics and Optical Engineering, 2018, Xi'an, China

Abstract

Here we report the solid source molecular beam epitaxy (MBE) growth of high quality of InGaAs/ GaAs quantum dot (QD) structures. A laser device is fabricated by the semiconductor process, including Lithography, Inductively Coupled Plasma (ICP), Plasma Enhanced Chemical Vapor Deposition (PECVD) and Reactive Ion Etching (RIE). The rigid is 100μm wide and cavity is 2000um long. Room temperature continuous-wave (CW) operation with emission wavelength around 1.31μm is presented. Threshold current (I_th) and threshold current density (J_th) is 0.3A and 150A/cm² at 15°, and output power at I_th=7A reached as high as 1.079W. We also observe that the spectrum shift from 1315nm to 1333nm when the injection currents increase from 1.5A to 3.5A, and the shift speed is 8.72 nm/A.

Citation Download Citation

Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hui-ming Hao, Ying-Qiang Xu, Hai-Qiao Ni, Yu Zhang, and Zhi-Chuan Niu "1.3μm InAs/InGaAs QD laser steady output power over 1.07 W", Proc. SPIE 11052, Third International Conference on Photonics and Optical Engineering, 1105212 (24 January 2019); https://doi.org/10.1117/12.2521947

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