Photo-ablation lithographic technique at 172 nm based upon flat excimer lamps (Conference Presentation)

Andrey E. Mironov; Dane J. Sievers; Jinhong Kim; Sung-Jin Park; James G. Eden

doi:10.1117/12.2529538

9 September 2019 Photo-ablation lithographic technique at 172 nm based upon flat excimer lamps (Conference Presentation)

Andrey E. Mironov, Dane J. Sievers, Jinhong Kim, Sung-Jin Park, James G. Eden

Author Affiliations +

Proceedings Volume 11086, UV and Higher Energy Photonics: From Materials to Applications 2019; 110860M (2019) https://doi.org/10.1117/12.2529538
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

Photolithographic techniques capable of producing sub-micron scale features typically involve laser or electron beam sources and chemical development of an exposed photoresist. We report here a novel, low cost photolithographic process utilizing flat, efficient lamps emitting at 172 nm. Recently developed 10 cm x 10 cm lamps, for example, produce more than 25 W of average power at 172 nm which enables the precise and fast patterning of most polymers, including those normally employed as e-beam resists and photoresists. Recent experiments demonstrate that PMMA films less than 100 nm in thickness are patterned in less than 20 s through a contact mask with high contrast resolution of 500 nm features. The ultimate resolution limit is expected to be ≤ 300 nm for a contact method. Electroplating technique was further used to deposit 500 nm gold features on a silicon substrate. The reported process does not require a photoresist development step and is performed in nitrogen atmosphere at atmospheric pressure which make it fast and affordable for fabrication facilities that have no access to high-tech photolithography equipment. Samples as large as 76 mm (3”) in diameter may be exposed with a single lamp in one step and areas of 1 m2 and above may be processed with tiled arrays of lamps. Patterning of bulk polymers (acrylic sheets, for example) through a photomask and subsequent formation of sub-micron features has also been demonstrated.

Conference Presentation

Citation Download Citation

Andrey E. Mironov, Dane J. Sievers, Jinhong Kim, Sung-Jin Park, and James G. Eden "Photo-ablation lithographic technique at 172 nm based upon flat excimer lamps (Conference Presentation)", Proc. SPIE 11086, UV and Higher Energy Photonics: From Materials to Applications 2019, 110860M (9 September 2019); https://doi.org/10.1117/12.2529538

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KEYWORDS

Lamps

Excimers

Lithography

Photoresist materials

Electron beam lithography

Photomasks

Photoresist developing

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