Double-well thin film transistors based on MgZnO/CdZnO superlattice

Sritoma Paul; Shubham Mondal; Md Jawaid Alam; Subhananda Chakrabarti

doi:10.1117/12.2527651

3 September 2019 Double-well thin film transistors based on MgZnO/CdZnO superlattice

Sritoma Paul, Shubham Mondal, Md Jawaid Alam, Subhananda Chakrabarti

Proceedings Volume 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI; 110891M (2019) https://doi.org/10.1117/12.2527651
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

A futuristic thin-film transistor based on a double-well heterostructure exploiting the band-gap tailoring property of Zinc Oxide (ZnO) has been proposed. Effects of carrier confinement in the MgZnO/CdZnO heterojunction have been studied by employing an additional MgZnO barrier in the CdZnO channel to create two potential wells. Carrier transport and device operation have been explained with the help of energy band diagrams extracted at different operating voltages. The optimised double-well structure yields an unprecedented I_ON/I_OFF=10¹⁵, simultaneously achieving a sub-threshold swing=74mV/decade, thereby indicating high switching speed. A high value of field-effect mobility, (μ_FE, max=32cm² /V-s) over a wide range of gate bias, manifests its ability to overcome the carrier scattering problem due to confinement, making it a promising candidate for high resolution and fast response optical display applications.

Citation Download Citation

Sritoma Paul, Shubham Mondal, Md Jawaid Alam, and Subhananda Chakrabarti "Double-well thin film transistors based on MgZnO/CdZnO superlattice", Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 110891M (3 September 2019); https://doi.org/10.1117/12.2527651

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