Radiation-induced degradation of optoelectronic sensors

C. Inguimbert; T. Nuns; D. Hervé; A. Vriet; J. Barbero; J. Moreno; A. Nedelcu; S. Ducret; O. Saint-Pé; F. Larnaudie; O. Gilard; C. Aicardi

doi:10.1117/12.2532289

9 October 2019 Radiation-induced degradation of optoelectronic sensors

C. Inguimbert, T. Nuns, D. Hervé, A. Vriet, J. Barbero, J. Moreno, A. Nedelcu, S. Ducret, O. Saint-Pé, F. Larnaudie, O. Gilard, C. Aicardi

Author Affiliations +

Proceedings Volume 11159, Electro-Optical and Infrared Systems: Technology and Applications XVI; 111590N (2019) https://doi.org/10.1117/12.2532289
Event: SPIE Security + Defence, 2019, Strasbourg, France

Abstract

Space system undergo particularly hard natural radiation environment, but can also potentially be subject to the radiations injected in low earth orbit by the explosion of a nuclear weapons. The increasing use of optoelectronic components in space systems makes the risk assessment regarding the radiation effects of an increasing interest. This paper presents recent results about the degradation of optoelectronic devices in term of atomic displacements. This paper Most of this work has been developed under the EDA contract JIP-ICET2 A-1341-RT-GP within the CapTech Technologies for Components and Modules’ (TCM) in EDA. (Tracking #: SD102-11)

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C. Inguimbert, T. Nuns, D. Hervé, A. Vriet, J. Barbero, J. Moreno, A. Nedelcu, S. Ducret, O. Saint-Pé, F. Larnaudie, O. Gilard, and C. Aicardi "Radiation-induced degradation of optoelectronic sensors", Proc. SPIE 11159, Electro-Optical and Infrared Systems: Technology and Applications XVI, 111590N (9 October 2019); https://doi.org/10.1117/12.2532289

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