Theory of photoreactive effect in bipolar and MOSFET transistors

Alexander V. Osadchuk; Vladimir S. Osadchuk; Iaroslav A. Osadchuk; Olena O. Seletska; Piotr Kisała; Karlygash Nurseitova

doi:10.1117/12.2538264

6 November 2019 Theory of photoreactive effect in bipolar and MOSFET transistors

Alexander V. Osadchuk, Vladimir S. Osadchuk, Iaroslav A. Osadchuk, Olena O. Seletska, Piotr Kisała, Karlygash Nurseitova

Author Affiliations +

Proceedings Volume 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019; 111761I (2019) https://doi.org/10.1117/12.2538264
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 2019, Wilga, Poland

Abstract

The paper deals with the fundamentals of the theory of photoreactive effect in bipolar and field-effect transistor structures. Photoreactive properties of semiconductor devices are widely used in a variety of radio electronics devices. Therefore, the study of these phenomena in bipolar transistor structures with negative resistance, allows us to create new sensory devices, which have better parameters than existing ones. The method of construction of radiomeasuring microelectronic transducers is offered on the base of photoreactive effect in sensing bipolar and field transistor structures, that has established premises for embodying transducers of optical radiation with a frequency output signal.

Citation Download Citation

Alexander V. Osadchuk, Vladimir S. Osadchuk, Iaroslav A. Osadchuk, Olena O. Seletska, Piotr Kisała, and Karlygash Nurseitova "Theory of photoreactive effect in bipolar and MOSFET transistors", Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111761I (6 November 2019); https://doi.org/10.1117/12.2538264

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