Paper
6 November 2019 The mathematical model of frequency gas transducer based on transistor structure with NDR for diagnosis of helicobacter pylori strains
Alexander V. Osadchuk, Neonila I. Osadchuk, Iaroslav A. Osadchuk, Olena O. Seletska, Oleksandr V. Kobylianskyi, Paweł Komada, Yedilkhan Amirgaliyev
Author Affiliations +
Proceedings Volume 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019; 111762T (2019) https://doi.org/10.1117/12.2536850
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 2019, Wilga, Poland
Abstract
The paper studies a frequency transducer of the gas concentration for detection of Helicobacter Pylori strains based on the MOSFET-bipolar transistor structure with a negative differential resistance and a highly sensitive NH3 sensor. A dynamic mathematical model of the frequency transducer of gas concentration has been developed using the state variable method which makes it possible to determinate the value of voltage or current at any point of the circuit at any particular time when the gas concentration is changed. Analytical expressions for transfer function and sensitivity equation have been obtained on the basis of the nonlinear equivalent circuit of the frequency gas concentration transducer. Sensitivity of the developed device for detecting Helicobacter Pylori strains is from 2.1 kHz/ppm to 3.4 kHz/ppm.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander V. Osadchuk, Neonila I. Osadchuk, Iaroslav A. Osadchuk, Olena O. Seletska, Oleksandr V. Kobylianskyi, Paweł Komada, and Yedilkhan Amirgaliyev "The mathematical model of frequency gas transducer based on transistor structure with NDR for diagnosis of helicobacter pylori strains", Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111762T (6 November 2019); https://doi.org/10.1117/12.2536850
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KEYWORDS
Transducers

Transistors

Mathematical modeling

Field effect transistors

Resistance

Capacitance

Inductance

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