Chrome mask fabrication on Al2O3 substrate for new generation devices based on AlGaN/GaN heterostructure

Kornelia Indykiewicz; Bartłomiej Paszkiewicz; Agnieszka Zawadzka; Regina Paszkiewicz

doi:10.1117/12.2535689

29 August 2019 Chrome mask fabrication on Al₂O₃ substrate for new generation devices based on AlGaN/GaN heterostructure

Kornelia Indykiewicz, Bartłomiej Paszkiewicz, Agnieszka Zawadzka, Regina Paszkiewicz

Proceedings Volume 11177, 35th European Mask and Lithography Conference (EMLC 2019); 1117715 (2019) https://doi.org/10.1117/12.2535689
Event: 35th European Mask and Lithography Conference, 2019, Dresden, Germany

Abstract

The goal of the conducted work was to fabricate chrome masks on Al₂O₃ substrates, which could be successfully applied to UV and DUV lithography. The technique is based on electron beam lithography and wet chrome etching in an ceric ammonium nitrate solution. The main advantage of the proposed fabrication method is a major decrease in exposition time due to more effective usage of electron energy. We will demonstrate the use of low electron energy exposition methods with PMMA/MA resist with applied doses of a few μC/cm². To the best of the author’s knowledge, sapphire substrates have not been previously used in photomasks fabrication. So far, full photomasks sets based on Al₂O₃ substrates have been manufactured and applied to fabricate the pilot series of acoustic transducers in the AlGaN/GaN heterostructure for piezotronics applications.

Citation Download Citation

Kornelia Indykiewicz, Bartłomiej Paszkiewicz, Agnieszka Zawadzka, and Regina Paszkiewicz "Chrome mask fabrication on Al₂O₃ substrate for new generation devices based on AlGaN/GaN heterostructure", Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 1117715 (29 August 2019); https://doi.org/10.1117/12.2535689

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