Paper
2 March 2020 Design progress for higher efficiency and brightness in 1 kW diode-laser bars
Author Affiliations +
Proceedings Volume 11262, High-Power Diode Laser Technology XVIII; 1126205 (2020) https://doi.org/10.1117/12.2545918
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
We present 1 kW-emitting diode-laser bars optimized for higher conversion efficiency and smaller far-field angle Θ95% power content), as needed, e.g., for solid-state laser pumping (wavelength λ= 940 nm). First, we review the latest high-efficiency designs, targeting reduced series resistance Rs and less power saturation and then discuss developments for high brightness via tailored chip-internal heat distribution. Recent results include conversion efficiency η of 66% and far-field width Θ 95%= 8.8° at 1 kW (thermal resistance Rth ~ 0.02 K/W), as well as 64% efficiency and 10.8° divergence at Rth ~ 0.05 K/W, equivalent to CW operation with advanced packaging.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. M. Karow, D. Martin, P. Della Casa, G. Erbert, and P. Crump "Design progress for higher efficiency and brightness in 1 kW diode-laser bars", Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 1126205 (2 March 2020); https://doi.org/10.1117/12.2545918
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KEYWORDS
Near field

Continuous wave operation

Semiconductor lasers

Beam quality measurement

High power diode lasers

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