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10 March 2020 Simulation of nonequilibrium electron and phonon dynamics in advanced concept photovoltaic devices (Conference Presentation)
Stephen M. Goodnick, Yongjie Zou, Raghuraj Hathwar
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Proceedings Volume 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX; 1127506 (2020) https://doi.org/10.1117/12.2551019
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We use ensemble Monte Carlo simulation of electrons and holes to investigate ultrafast carrier processes related to hot carrier capture and multi-exciton generation relevant for advanced photovoltaic devices. The particle based simulation includes electron-phonon scattering in quantum wells and quantum wires, intercarrier scattering including impact ionization, and nonequilibrium phonon effects. For quantum well devices, we elucidate how nonequilibrium phonons and real/k-space transfer contribute to the slower energy relaxation rates observed in quantum well structures. For nanowires, we show that energy relaxation is slowed due to bandstructure effects and reduced dimensionality, and that impact ionization is enhanced above the threshold, leading to strong carrier multiplication.
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Stephen M. Goodnick, Yongjie Zou, and Raghuraj Hathwar "Simulation of nonequilibrium electron and phonon dynamics in advanced concept photovoltaic devices (Conference Presentation)", Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 1127506 (10 March 2020); https://doi.org/10.1117/12.2551019
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KEYWORDS
Monte Carlo methods
Phonons
Solar energy
Photovoltaics
Quantum wells
Ionization
Scattering
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