Dislocation density reduction in (101 1 ) GaN at a high temperature using tri-halide vapor phase epitaxy

Kenji Iso; Shoma Ohtaki; Erina Miyata; Yuka Kido; Hisashi Murakami; Akinori Koukitu

doi:10.1117/12.2543661

16 February 2020 Dislocation density reduction in (101 ̅1 ̅) GaN at a high temperature using tri-halide vapor phase epitaxy

Kenji Iso, Shoma Ohtaki, Erina Miyata, Yuka Kido, Hisashi Murakami, Akinori Koukitu

Author Affiliations +

Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 1128009 (2020) https://doi.org/10.1117/12.2543661
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

The dependence of growth temperature for the epitaxial films grown by tri-halide vapor phase epitaxy (THVPE) on the crystal characteristics, such as the surface morphology, the full width at half maximum (FWHM), the threading dislocation density (TDD), the impurity concentration, and the photoluminescence (PL) was investigated. The epitaxial films grown at relatively high growth temperature of 1300-1350 °C showed that the crystal quality, such as FWHM and TDD retained that for the used substrate. The near-band-edge emission for PL for 1300-1350 °C growth showed lager intensities due to low nonradiative recombination center (NRC). Moreover, the epitaxial growth on the supercritical acidic ammonia technology (SCAAT™) substrate was demonstrated. The TDD was as low as 2 × 10⁴ cm^-2, which indicated that the epilayer grown by THVPE retained the superior crystal quality of SCAAT™.

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Kenji Iso, Shoma Ohtaki, Erina Miyata, Yuka Kido, Hisashi Murakami, and Akinori Koukitu "Dislocation density reduction in (101 ̅1 ̅) GaN at a high temperature using tri-halide vapor phase epitaxy", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128009 (16 February 2020); https://doi.org/10.1117/12.2543661

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