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10 March 2020 Characterizations of BAIN films with various boron contents (Conference Presentation)
Tinh Binh Tran, Feras AlQatari, Xiaohang Li
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Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 112800F (2020) https://doi.org/10.1117/12.2545798
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
BAlN films were performed by either the flow-modulated epitaxy method or continuous growth method. All BxAl1-xN films are single-phase confirmed by high-resolution 2θ–ω (002) X-ray diffraction. The Boron (B) content of each sample was determined by Secondary Neutral Mass Spectrometry with various values have been achieved from 22 to 34% and reconfirmed by Rutherford backscattering spectrometry. All BAlN samples clearly showed the columnar crystalline on the surface which was observed by AFM measurement. The high B contents can expand the applications of BAlN for deep ultraviolet and power electronic device applications.
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Tinh Binh Tran, Feras AlQatari, and Xiaohang Li "Characterizations of BAIN films with various boron contents (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800F (10 March 2020); https://doi.org/10.1117/12.2545798
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KEYWORDS
Boron
Deep ultraviolet
Electronic components
Aluminum nitride
Distributed Bragg reflectors
Electronics
Heterojunctions
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