Presentation + Paper
16 February 2020 GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating
Tsu-Chi Chang, Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson, Åsa Haglund, Tien-Chang Lu
Author Affiliations +
Abstract
We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 μm had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsu-Chi Chang, Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson, Åsa Haglund, and Tien-Chang Lu "GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800M (16 February 2020); https://doi.org/10.1117/12.2545315
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KEYWORDS
Vertical cavity surface emitting lasers

Titanium dioxide

Reflectivity

Gallium nitride

Reflectors

Dielectrics

Dielectric polarization

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