Advanced approaches to critical dimension measurement in high-throughput industrial processing (Conference Presentation)

John Cruickshank; Jeffrey Witz; Toni Ivanov; Vadim Pinskiy; Matthew Putman

doi:10.1117/12.2555933

10 March 2020 Advanced approaches to critical dimension measurement in high-throughput industrial processing (Conference Presentation)

John Cruickshank, Jeffrey Witz, Toni Ivanov, Vadim Pinskiy, Matthew Putman

Author Affiliations +

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810Q (2020) https://doi.org/10.1117/12.2555933
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Critical Dimensions Measurement is a principle Quality Control method for industrial semiconductor production. Though an array of instrument is available for characterization. These are often device specialized for narrow band of samples, expensive and lack throughput for many applications. We have developed an extensive toolbox of computer vision and deep learning approaches for inline calculation of spatial dimensions of imaged devices. We expand this technique for real time measurement during video faced focal search for critical depth measurement. We use active template matching to compare and track the object through the stack to the known surface profile of the object. This allows for compensation of environmental noise, multi-object tracking within a single XY field-of-view and defect detection to be performed on the same images. Combined, this toolbox offers higher accuracy and faster processing than conventional approaches.

Conference Presentation

Citation Download Citation

John Cruickshank, Jeffrey Witz, Toni Ivanov, Vadim Pinskiy, and Matthew Putman "Advanced approaches to critical dimension measurement in high-throughput industrial processing (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810Q (10 March 2020); https://doi.org/10.1117/12.2555933

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